Effects of Boron Dopant Concentration on Energy Levels of Crystalline Silicon

Taye, Getahun Eredie

dc.contributor.author	Taye, Getahun Eredie
dc.date.accessioned	2017-08-01T03:26:28Z
dc.date.available	2017-08-01T03:26:28Z
dc.date.issued	2017-08-01
dc.identifier.uri	http://hdl.handle.net/123456789/7494
dc.description	A Thesis Submitted to The Department ofMaterials Science and Engineering	en_US
dc.description.abstract	Abstract The study examined energy levels of boron (B) doped crystalline Si (c-Si) with different boron dopant concentrations and temperatures. In this work, energy levels ofboron doped c-Si were studied using Simulation and Modeling. Band Gap Calculator ofPV lighthouse was used to collect data and Origin Lab 8.0 was also employed to plot energy levels of doped c-Si in graphs. Energy levels of boron doped c-Si are approaching the intrinsic Fermi-energy level of c-Si at different dopant concentration and they depend on temperature. Besides, energy levels of boron doped c-Si are approaching the valance band of boron doped c-Si at different temperature and the approach increase with increasing dopant concentratiQ.n. Energy band gap and band gap narrowing of c-Si are decreasing at different boron dopant concentration with increasing temeperature However, energy band gap :ofc-Si is decre1asing 'while energy' band g~p nartbwing~ is increasing at different temperature with increasing boron dopant consentration. in relation to the study, theoretical background, related literature and mathe.matical equations and theoretical models to characterize doped c-si are prsented and corelated to the study. The study has practical implication-iri relation to 'c:Si '.doping to' predict 'eleetrid.l :property of the material by doping ofboron at different concentration and temperature·'ranges. -j Keywords: Crystalline" Sili«ofh' Boron, dopa!}t Modeling	en_US
dc.subject	MATERIALS SCIENCES	en_US
dc.title	Effects of Boron Dopant Concentration on Energy Levels of Crystalline Silicon	en_US
dc.type	Thesis	en_US