Abstract:
Abstract
The study examined energy levels of boron (B) doped crystalline Si (c-Si) with different
boron dopant concentrations and temperatures. In this work, energy levels
ofboron doped
c-Si were studied
using Simulation and Modeling. Band Gap Calculator
ofPV lighthouse
was used to collect data and Origin Lab 8.0 was also employed to plot energy levels
of
doped c-Si in graphs. Energy levels of boron doped c-Si are approaching the intrinsic
Fermi-energy level
of c-Si at different dopant concentration and they depend on
temperature. Besides, energy levels
of boron doped c-Si are approaching the valance
band
of boron doped c-Si at different temperature and the approach increase with
increasing dopant
concentratiQ.n. Energy band gap and band gap narrowing of c-Si are
decreasing at different boron dopant concentration with increasing temeperature However,
energy band gap :ofc-Si is decre1asing 'while energy' band g~p nartbwing~ is increasing at
different temperature with increasing boron dopant consentration. in relation to the study,
theoretical background, related literature and mathe.matical equations and theoretical
models to characterize doped c-si are prsented and corelated to the study. The study
has practical implication-iri relation to 'c:Si '.doping to' predict 'eleetrid.l :property of the
material by doping
ofboron at different concentration and temperature·'ranges. -j
Keywords: Crystalline" Sili«ofh' Boron, dopa!}t
Modeling
