A spintronics device is multifunctional device, which allows the interplay between charge carriers and spin in a single system. These materials are very important in modern technology for non volatility, fast data processing, low power consumption and high integration density. To achieve the advantages of a spintronics device, semiconductor materials are doped with magnetic impurity of transition metals to give diluted magnetic semiconductors which have both ferromagnetic and semiconductor properties. The main objective of this project is to study the ferromagnetism in Mn doped ZnTe diluted magnetic semiconductors (DMSs). ZnTe when doped with a very low percent of Mn ion can exhibit room temperature ferromagnetism. Due to their ferromagnetic properties they can be used in spintronic applications. ZnMnTe systems with wurtzite structure and room temperature ferromagnetism are investigated using Heisenberg model Hamiltonian. The Hamiltonian includes exchange interactions with the nearest neighbors. Different calculations are performed using Holstein-Primakoff transformation and Green function formalism. The researches of the study reveal that the total average number of magnons and reduced magnetization are determined. In addition to this concentration dependent transition temperature and specific heat capacity of magnon are also predicted. The average number of magnon depends on temperature with T 3/2 relation, specific heat capacity of magnon also depends on temperature with T 3/2relation, reduced magnetization decreases with increasing temperature and the transition temperature linearly depends on manganese concentration ion. Key words: Semiconductor, Magnetism, DMS, Ferromagnetism, Spintronics,