In this project work, we have investigate the effect of size variation of amorphous silicon quantum dot(a-SiQDs) on intensity of thrermoluminescence(TL)emission using interactive multi trap system (IMTs)and OTOR model. The OTOR model consists of one active electron trap (AT),one thermally disconnected deep trap(TDDT)and one recombination center (RC),and it is used to determine thrermoluminescence intensity (I) using parameters like activation energy (E), kinetic order (b) and the frequency factors (s).In TL glow curve the level of energy is shallow traps at conduction band(CB) and deep trap at the valance band (VB) level for amorphous silicon quantum dot, each parameter can provide detailed information about TL emission .From this investigation the size of silicon quantum dot of diameters 2,3,4,and 5nmare numerically simulated. As the size of silicon quantum dot (Si-QDs) decrease, the intensity of TL increases. The intensity of TL is also affected by temperature but the peak temperature for each quantum dots is almost remains independent of the size of the dots. In OTOR model the quantum dots shifts toward high temperature values, and the width of the glow-curve gets broader and broader with an increase of dots size. The emission of TL also depends on the concentration of charge carriers .As the temperature increase the concentration of electrons in the TDDT m(T) increase and the quantum dot size increase. Therefore the intensity of TL emission increases with decrease in the size of quantum dots; it is illustrated by different models and mathematical treatment.