Optical properties of GaAs nanostructures

Wakjira, Kumera

dc.contributor.author	Wakjira, Kumera
dc.date.accessioned	2019-10-11T04:19:00Z
dc.date.available	2019-10-11T04:19:00Z
dc.date.issued	2019-10-11
dc.identifier.uri	http://hdl.handle.net/123456789/9859
dc.description.abstract	The optical properties described depend on the wavelength, temperatutre and photon energy. By using the mathematical relation and theoretical concept stated in literature review, the effect of wave length and the optical band gap on the optical properties were studied. As the wavelength decrease the energy, coefficient of absorption, absorbance increase. In the photon energy range of 0.6–6.001 eV absosoption coefficient is constant at 0.61.6 eV and increase at 1.64.81 eV then it decrease at 4.81–6.001 eV. The optical conductivity increases in the energy range 1.6– 4.81 eV. It rises to a maximum value of 14.3410 15 at 4.81 eV and decreases at energy range of 4.81– 6.001 eV. The real part of the dielectric function increase in energy range 0.6–2.800045 eVand it raises to a maximum value of 23.609 at 2.800045 eV, then decreases with increased in the energy range of 2.800045–6.001 eV. The imaginary part of dielectric function increases in the range of 1.6–4.81 eV and decreases in the energy range 4.81–6.001 eV. . Key words: Optical bandgap, Absorption coefficient, Optical conductivity, Dielectric functions.	en_US
dc.language.iso	en	en_US
dc.subject	Physics	en_US
dc.title	Optical properties of GaAs nanostructures	en_US
dc.type	Thesis	en_US