BDU IR

OPTICAL ENHANCEMENT OF HETERO-JUNCTION OF SILICON BASED SOLAR CELL OPTICAL ENHANCEMENT OF JUNCTION OF SILICON OPTICAL ENHANCEMENT OF JUNCTION OF SILICON BASED SOLAR CELL

Show simple item record

dc.contributor.author Urge, Mengesha
dc.date.accessioned 2019-10-11T04:15:25Z
dc.date.available 2019-10-11T04:15:25Z
dc.date.issued 2019-10-11
dc.identifier.uri http://hdl.handle.net/123456789/9858
dc.description.abstract ABSTRACT The main purpose of this master’s project is to review of literature about the study optical enhancement of hetero-junction silicon-based solar cell. The impurities added have a dominant role of efficiencies such as boron and phosphorus. These are usually expressed in terms of p-type and n-type respectively. Then combining the p-type and n-type semiconductor, the heterojunction of dissimilar semiconductor materials was made. The usual method described in the literature was based on the plasma-enhanced chemical vapor deposition and radio-frequency magnetron sputtering for the fabrication of the silicon hetero-junction solar cells. In order to characterize the parameters mention earlier, the illuminated J-V characteristics and spectrophotometers are used. Generally, the conversion efficiency silicon solar cell is depending on the window layer, an antireflection layer, thickness of material and intensity of photon. The fluctuation of short-circuit current and open-circuit voltage are different with different antireflection layer, the thickness of materials and intensity of light (dark or illumination). The silicon layer enhanced efficiency by 15.27% whereas the ITO layer by 19.58% experimentally. When we compared the conversion efficiency of SiO and ITO antireflection, it is much different. The conversion efficiency of ITO is greater than SiO 2 The ITO layer was superior to SiO 2 2. layer in terms of optical and electrical performance. The best thickness for the c-Si layer is obtained with value of 5×10 4 nm which is thick enough for absorbing light. Keywords: hetero-junction, p-type, n-type, plasma-enhanced chemical vapor deposition, radio frequency magnetron sputtering en_US
dc.language.iso en en_US
dc.subject Physics en_US
dc.title OPTICAL ENHANCEMENT OF HETERO-JUNCTION OF SILICON BASED SOLAR CELL OPTICAL ENHANCEMENT OF JUNCTION OF SILICON OPTICAL ENHANCEMENT OF JUNCTION OF SILICON BASED SOLAR CELL en_US
dc.type Thesis en_US


Files in this item

This item appears in the following Collection(s)

Show simple item record