| dc.description.abstract |
ABSTRACT
The main purpose of this master’s project is to review of literature about the study optical
enhancement of hetero-junction silicon-based solar cell. The impurities added have a dominant
role of efficiencies such as boron and phosphorus. These are usually expressed in terms of p-type
and n-type respectively. Then combining the p-type and n-type semiconductor, the heterojunction
of dissimilar semiconductor materials was made. The usual method described in the
literature was based on the plasma-enhanced chemical vapor deposition and radio-frequency
magnetron sputtering for the fabrication of the silicon hetero-junction solar cells. In order to
characterize the parameters mention earlier, the illuminated J-V characteristics and
spectrophotometers are used. Generally, the conversion efficiency silicon solar cell is depending
on the window layer, an antireflection layer, thickness of material and intensity of photon. The
fluctuation of short-circuit current and open-circuit voltage are different with different
antireflection layer, the thickness of materials and intensity of light (dark or illumination). The
silicon layer enhanced efficiency by 15.27% whereas the ITO layer by 19.58% experimentally.
When we compared the conversion efficiency of SiO
and ITO antireflection, it is much
different. The conversion efficiency of ITO is greater than SiO
2
The ITO layer was superior to
SiO
2
2.
layer in terms of optical and electrical performance. The best thickness for the c-Si layer is
obtained with value of 5×10
4
nm which is thick enough for absorbing light.
Keywords: hetero-junction, p-type, n-type, plasma-enhanced chemical vapor deposition, radio
frequency magnetron sputtering |
en_US |