Light Induced Response on GaAs Semiconductor  Crystal

Banchamlak Asnakew

dc.contributor.author	Banchamlak Asnakew
dc.date.accessioned	2022-09-08T10:24:50Z
dc.date.available	2022-09-08T10:24:50Z
dc.date.issued	2022-05
dc.identifier.uri	http://ir.bdu.edu.et/handle/123456789/14099
dc.description.abstract	This master’s project is based on the Literatures review of the light induced properties of GaAs semiconductor. It basically addresses the parameters, like energy band gap, wave length, temperature dependency, external photon energy. According to Gregor et al in semiconductors and semi metals the band gap energy of GaAs is 1.42eV, which correspond 900nm wavelength. Literatures shows that when an external temperature increases on this semiconductor decreases the band gap energy. It is also possible to increase the efficiency of the GaAs by adding the impurity to this semiconductor. PL spectra were used to investigate to characterize GaAs using external laser photon energy, energy band gap, and the type of radiation transitions. The characterization was carried out at a temperature of 300 K and 77 K with power variation in the range 40-150 mW. Then, the wavelength and band gap energy were calculated. The values of the band gaps energies were 1.4222 – 1.519 eV. Key words: GaAs semiconductors, laser photon energy, PL spectroscopy, Energy band gap, external temperature, and Energy band gap	en_US
dc.language.iso	en_US	en_US
dc.subject	Physics	en_US
dc.title	Light Induced Response on GaAs Semiconductor Crystal	en_US
dc.type	Thesis	en_US